English | NanjingTech | Contact
专题讲座    
  科研信息   
  院务公告   
  学生事务   
  专题讲座   
  学术会议   
  IAM星火大讲堂   

当前位置: 网站首页 通知公告 专题讲座 正文
沙特国王科技大学Lain-Jong (Lance) Li教授学术报告
 添加时间:2016/06/23 发布: 管理员
二维码

扫描二维码,在手机中查看。

报告时间:2016年6月28日下午14:00

报告地点:科技创新大楼C501室

报告题目:Growth and Applications of Two-Dimensional Transition Metal Dichalcogenides


 

Growth and Applications of Two-Dimensional Transition Metal Dichalcogenides

 

Lain-Jong Li

Physical Sciences and Engineering Division, King Abdullah
University of Science and Technology, Thuwal, 23955-6900,
Kingdom of Saudi Arabia 


 

Atomically thin 2D Transition metal dichalcogenide (TMD) materials provide a wide range of basic building blocks with unique electrical, optical, and thermal properties which do not exist in their bulk counterparts. Our recent demonstration in vapor phase growth of TMD monolayer [1] has stimulated the research in growth and applications [2].  In this presentation, I would start with the discussion on the synthesis and characterizations of crystalline MoS2 and WSe2 monolayers. These layer materials can be transferred to desired substrates, making them suitable building blocks for constructing multilayer stacks for various applications [3].
Heterostructures of 2D materials formed by vertical stacking have been realized recently via transfer of their exfoliated flakes, where their properties are dominated by the stacking orientation and strength of interlayer coupling. The method to determine valence band and conduction band alignment for various TMD materials is proposed [4]. Another very attractive structure is the lateral heterostructure, where the atomically sharp p-n junction exhibits diode properties and a large strain exhibits at the junction region which offers tenability in electronic structures. The direct growth of such lateral heterostructures is shown below (Figure 1) [5]. These unique 2D heterostructures have abundant implications for many potential applications.
TMD materials are also promising materials for post-Si electronics, where their ultra-thin body structure may be able to serve for 5 nm technology nodes [6] and a 10 nm channel length of transistor based on MoS2 few layers is demonstrated [7].
  

 

 


Fig. 1  Lateral heterostructure of MoS2 and WSe2 monolayers

 

References
[1] Y.-H. Lee et al. Adv. Mater. 24, 2320 (2012)
[2] M. Chhowalla et al. Nature Chem. 5, 263-275 (2013)
[3] C.-H. Chen et al. Adv. Mater. 26,4838 (2014)
[4] M.-H. Chiu et al. Nature Comm. 6, 7666 (2015)
[5] M.-Y. Li et al. Science 349, 524 (2015)
[6] M.C. Chen et al. IEDM (2015)
[7] K.H. Li et al VLSI (2016
)

 

 

 


Copyright ? 2017-2019 三昇体育平台_三昇体育(唯一)官网 All rights reserved.

官方微信
地址:南京市新模范马路5号138信箱 总共访问:   [旧版回顾]
电话: 025-83587982 邮件:iam@njtech.edu.cn
 
XML 地图 | Sitemap 地图